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Give Samsung a blow, TSMC bypasses 2nm and goes straight to 1.4nm | XFastest News

TSMC has clearly stated many times that the 3nm process will be put into large-scale production in the second half of the year.

TSMC’s 3nm process still continues the FinFET (fin field effect) transistor structure, rather than Samsung’s more difficult GAA (gate full ring) transistor. However, TSMC is obviously deeper, knowing that the name of the current process node is confusing, and whoever has a higher yield is obviously more likely to take the lead.

But next, TSMC doesn’t seem to plan to let it go, and even bypasses the 2nm process and goes straight to the 1.4nm process. There are reports that TSMC’s 3nm process R&D team will fully switch to the development of the 1.4nm process in June.

Samsung pointed out at last year’s foundry meeting that it will mass-produce the 2nm process in 2025, but it did not expect to be hit by TSMC again. As for the equally ambitious Intel, it plans to produce 1.8nm process products in the second half of 2024.

A process “arms race” related to the glory of Moore’s Law has kicked off again.

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